Structural characterization of SimGenstrained layer superlattices
نویسندگان
چکیده
منابع مشابه
Structural characterization of Si,Ge, strained layer superlattices
Si,Ge, strained layer superlattice (SLS) structures were grown by molecular beam epitaxy on Ge$ii --x buffer layers on (100) Si substrates to determine the effects of buffer layer composition, SLS thickness ratio, and superlattice periodicity, on the overall quality of these structures. X-ray diffraction methods were used to determine how closely actual periodicities and compositions met target...
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Molecular beam epitaxy grown InAs/GaSb superlattices, containing InSb-like interfacial layers, were analyzed by a combination of x-ray diffraction XRD and structural refinement. The superlattice refinement from x rays SUPREX method determines with high accuracy the average thicknesses and d spacings of the individual InAs and GaSb layers in addition to standard structural parameters usually obt...
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We prepared micrometer-sized three-dimensional (3D) superlattices of gold nanoparticles protected by Nacetylglutathione (NAG). The nanoparticles were self-assembled at an air/water interface under a highly acidic condition. Morphological studies revealed that the superlattices formed fivefold symmetric structures such as decahedron and icosahedron, which were probably developed by multiple twin...
متن کاملVALENCE BAND STRUCTURE OF STRAINED-LAYER Si-Si0.5Ge0.5 SUPERLATTICES
We calculate the valence subband dispersion of Sio,5Ge,,5 Si strained layer structures grown on a Si (001) substrate and on a Si0,,5Ge0,25 buffer. We use the 6x6 Luttinger-Kohn Hamiltonian, including the effects both of strain and of the split-off band. The heavy-hole zone centre states are separated by over 60meV from the light-hole states and the highest valence subband has a low zone-centre ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1992
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.350812